PTFA261702E V1

PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced package with slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features WiMAX Performance VDD = 28 V, IDQ = 1800 mA, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) 30 -15 Efficiency EVM: ƒ = 2.62 GHz EVM: ƒ = 2.68 GHz EVM: ƒ = 2.65 GHz 20 • Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical WiMAX performance at 2650 MHz, 28 V - Average output power = 32 W - Linear gain = 15 dB - Efficiency = 20% - Error vector magnitude = –29 dB • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 170 W (CW) output power -20 -25 15 -30 10 -35 5 -40 0 EVM (dBc) Efficiency (%) 25 PTFA261702E Package H-30275-4 -45 20 25 30 35 40 45 50 Output Power (dBm) RF Characteristics WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1800 mA, POUT = 32 W average ƒ = 2650 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 15 — dB Drain Efficiency ηD — 20 — % EVM — –29 — dB Error Vector Magnitude All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1800 mA, POUT = 170 W PEP, ƒ = 2650 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 14 15 — dB Drain Efficiency ηD 31 33 — % Intermodulation Distortion IMD — –30 –27 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.08 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 1800 mA VGS — 2.5 — V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 643 W 3.68 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 170 W CW) RθJC 0.272 °C/W Ordering Information Type and Version Package Type Package Description Marking PTFA261702E H-30275-4 Thermally-enhanced slotted flange, push-pull PTFA261702E V1 *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) WiMAX Performance WiMAX Performance VDD = 28 V, IDQ = 1800 mA, ƒ = 2650 MHz, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -15 VDD = 28 V, ƒ = 2650 MHz (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -20 TCASE = 25°C -25 TCASE = 90°C -25 EVM (dB) EVM (dB) -20 -30 -35 -30 -40 -45 -45 -50 25 30 35 40 45 IDQ = 2000 mA -35 -40 20 IDQ = 1600 mA IDQ = 1800 mA 15 50 20 25 40 45 50 Gain vs. Output Power Intermodulation Distortion vs. Output Power VDD = 28 V, ƒ = 2650 MHz VDD = 28 V, IDQ = 1800 mA ƒ1 = 2619 MHz, ƒ2 = 2620 MHz; ƒ1 = 2679 MHz, ƒ2 = 2680 MHz -20 16.5 IDQ = 2200 mA ƒ = 2680 MHz ƒ = 2620 MHz -30 IDQ = 1800 mA IMD (dBc) Power Gain (dB) 35 Output Power (dBm) Output Power (dBm) 16.0 30 15.5 15.0 IDQ = 1400 mA -40 3rd Order -50 -60 14.5 7th 5th -70 14.0 41 43 45 47 49 51 38 53 Output Power (dBm) Data Sheet 40 42 44 46 48 50 Output Power, Avg. (dBm) 3 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Typical Performance (cont.) IS-95 CDMA Performance IS-95 CDMA Performance VDD = 28 V, IDQ = 1800 mA, ƒ = 2680 MHz, PAR = 9.8 dB @ 0.01 probability on CCDF -20 30 20 -40 Alt1 1.25 MHz 15 -50 -60 10 5 -70 0 -80 35 37 39 41 43 45 Drain Efficiency (%) Drain Efficiency (%) Adj 885 kHz Adj. Ch. Power Ratio (dBc) -30 25 TCASE = 25°C TCASE = 90°C 30 Efficiency -30 -35 Adj 885 kHz 18 -50 -55 6 -60 35 41 43 45 -70 47 IDQ = 1800 mA, ƒ = 2680 MHz 18 30 17 16 Output Power (dBm) 35 53.0 Gain (dB) Efficiency (%) 39 Output Power vs. Supply Voltage 19 15 37 Output Power (dBm), Avg. 40 Gain -65 Alt1 1.25 M`Hz VDD = 28 V, IDQ = 1800 mA, POUT = 50 dBm 20 -45 12 0 47 -40 Efficiency CW Sweep in a Broadband Test Fixture 25 -25 24 Output Power (dBm), Avg. Efficiency -20 Adj. Ch. Power Ratio (dBc) VDD = 28 V, IDQ = 1800 mA, ƒ = 2680 MHz, PAR = 9.8 dB @ 0.01 probability on CCDF 15 52.5 52.0 51.5 14 51.0 10 2600 2620 2640 2660 2680 13 2700 23 25 27 29 31 33 Supply Voltage (V) Frequency (MHz) Data Sheet 4 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Typical Performance (cont.) Bias Voltage vs. Temperature Power Sweep, CW Conditions Voltage normalized to typical gate voltage, series show current VDD = 28 V, IDQ = 1800 mA, ƒ = 2680 MHz 18 60 Gain (dB) 16 15 TCASE = 90°C 50 Gain 40 14 30 13 Efficiency 12 20 Drain Efficiency (%) 17 Normalized Bias Voltage (V) TCASE = 25°C 11 10 10 50 90 130 170 10 210 1.03 0.37 A 1.02 1.11 A 1.01 1.85 A 1.00 2.78 A 0.99 5.56 A 0.98 8.34 A 0.97 0.96 0.95 -20 0 20 40 60 80 100 Case Temperature (°C) Output Power (W) Broadband Circuit Impedance Z0 = 50 Ω 0.1 S G Z Source G 2600 MHz D Z Source Ω Frequency 2700 MHz Z Load Ω MHz R jX R jX 2600 8.9 –1.2 7.0 –11.9 2620 9.1 –1.2 6.6 –11.5 2640 9.2 –1.1 6.2 –11.2 2660 9.3 –0.9 5.9 –10.9 2680 9.4 –0.8 5.7 –10.5 2700 9.5 –0.6 5.4 –10.2 Data Sheet 0.4 Z Load 0.3 D 0.2 Z Source 5 of 10 Z Load 2700 MHz 0. 2 2600 MHz Rev. 01.1, 2009-02-20 Data Sheet VGG C4 10µF 35V R3 2K V C2 0.001µF Q1 BCP56 R2 1.3K V QQ1 LM7805 C5 0.1µF 6 of 10 R7 1K V RF_IN R6 1K V R5 10 V R4 2K V C3 0.001µF R1 1.2K V C1 0.001µF l1 l2 C12 0.1µF C6 0.1µF VDD l23 l10 l3 l11 l4 l12 l20 C13 10µF C7 0.1µF l22 C11 4.5pF C10 4.5pF l5 l13 C8 10µF C14 3.3pF l6 l14 l19 l18 l7 l15 l21 R9 10 V l8 l16 C9 3.3pF l9 l17 R8 10 V DUT l37 l24 l44 l33 C20 3.3pF l38 l25 l34 l45 l39 C25 0.3pF l26 C15 3.3pF l46 l41 l28 C21 2000pF l40 l27 C16 2000pF C22 1µF C27 4.5pF C26 4.5pF l35 l47 l42 l29 C17 1µF l30 l36 C23 2.2µF l43 l31 C18 2.2µF C24 10µF 50V l32 C19 10µF 50V VDD RF_OUT VDD PTFA261702E Confidential, Limited Internal Distribution Reference Circuit Reference circuit block diagram for ƒ = 2680 MHz Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information DUT PCB PTFA261702E 0.76 mm [.030"] thick, e r = 3.48 Microstrip Microstrip Electrical Characteristics at 2680 MHz l1 l2 l3 l4, l12, l28, l29, l41, l42 l5, l13 l6, l14 l7, l15 l8, l16 l9, l17 l10 l11 l18, l21 l19, l22 l20, l23, l24, l37 l25, l38 l26, l39 l27, l40 l30 l31 l32 l33, l44 l34, l45 l35, l46 l36, l47 l43 0.450 0.296 0.049 0.021 0.010 0.153 0.028 0.067 0.015 0.099 0.463 0.193 0.105 0.043 0.020 0.101 0.019 0.132 0.044 0.258 0.229 0.083 0.225 0.060 0.043 0.553 Data Sheet LDMOS Transistor Rogers RO4350 1 oz. copper Dimensions: L x W (mm) Dimensions: L x W (mm) Dimensions: L x W (in.) Dimensions: L x W (in.) λ, 49.9 Ω λ, 35.5 Ω λ, 49.9 Ω λ, 34.0 Ω λ, 40.6 Ω λ, 21.0 Ω λ, 14.6 Ω λ, 8.2 Ω λ, 8.2 Ω λ, 44.6 Ω λ, 49.9 Ω λ, 49.9 Ω λ, 49.9 Ω λ, 49.9 Ω λ, 5.9 Ω λ, 5.9 Ω λ, 5.9 Ω λ, 50.3 Ω λ, 50.3 Ω λ, 35.5 Ω λ, 49.9 Ω λ, 49.9 Ω λ, 49.9 Ω λ, 49.9 Ω λ, 49.9 Ω λ, 49.9 Ω 30.45 x 1.70 19.56 x 2.84 3.30 x 1.70 1.40 x 3.02 0.69 x 2.34 9.80 x 5.66 1.78 x 8.81 4.11 x 16.94 0.94 x 16.94 6.65 x 2.03 31.32 x 1.70 13.06 x 1.70 7.11 x 1.70 2.92 x 1.70 1.24 x 24.16 6.17 x 24.16 1.19 x 24.16 8.97 x 1.68 2.95 x 1.68 17.04 x 2.84 15.52 x 1.70 5.64 x 1.70 15.24 x 1.70 4.06 x 1.70 2.92 x 1.70 37.44 x 1.70 7 of 10 1.199 x 0.067 0.770 x 0.112 0.130 x 0.067 0.055 x 0.119 0.027 x 0.092 0.386 x 0.223 0.070 x 0.347 0.162 x 0.667 0.037 x 0.667 0.262 x 0.080 1.233 x 0.067 0.514 x 0.067 0.280 x 0.067 0.115 x 0.067 0.049 x 0.951 0.243 x 0.951 0.047 x 0.951 0.353 x 0.066 0.116 x 0.066 0.671 x 0.112 0.611 x 0.067 0.222 x 0.067 0.6 x 0.067 0.16 x 0.067 0.115 x 0.067 1.474 x 0.067 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Reference Circuit (cont.) VDD QQ1 R5 C5 R6 R7 R4 C4 C3 R3 R1 R2 C6 C1 C2 RF_OUT VD D C7 C15 C8 C19 C18 C17 C16 C9 Q1 R8 C10 C25 C26 C27 C11 RO4350_.030 R9 A261702_01 C14 C21 C13 C12 C20 C24 C22 C23 a 2 6 1 7 0 e _ c d _ 2 1 - 5 0 - 8 V DD RF_IN Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C6, C7, C12 C8, C13 C9, C14, C15, C20 C10, C11, C26, C27 C16, C21 C17, C22 C18, C23 C19, C24 C25 Q1 QQ1 R1 R2 R3 R4 R5, R8, R9 R6, R7 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Capacitor, 10 µF Ceramic capacitor, 3.3 pF Ceramic capacitor, 4.5 pF Capacitor, 2000 pF Ceramic capacitor, 1 µF Capacitor, 2.2 µF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 0.3 pF Transistor Voltage regulator Chip resistor 1.2K ohms Chip resistor 1.3K ohms Chip resistor 2K ohms Potentiometer 2K ohms Chip resistor 10 ohms Chip resistor 1K ohms Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC Digi-Key Digi-Key Garrett Electronics ATC Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 490-1819-2-ND 100B 3R3 100B 4R5 100B 203JW 445-1411-2-ND 445-1447-2-ND TPSE106K050R0400 100B 0R3 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND *Gerber files for this circuit available on request. Data Sheet 8 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Package Outline Specifications Package H-30275-4 C L 2X 45°±5° X 1.19 [.047] CL 13.72 [.540] 2X R 1.59 [.063] D D 16.61±0.51 [.654±.020] 9.40 +0.10 –0.15 [.370 +.004 ] –.006 2X 3.18 [.125] CL +0.10 LID 9.14 –0.15 [.360 +.004 ] –.006 S G 4X 3.23±0.25 [.127±.010] Flange 10.16 [.400] G 4X 11.68 [.460] 35.56 [1.400] 31.24±0.28 [1.230±.011] C L 1.63 [.064] 4.55±0.38 [.179±.015] 0.038 [.0015] -AH-30275-4_po_8-1-2007 2.18 [.086] SPH 41.15 [1.620] Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.13 +0.051/–0.025 [.005 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Revision History: 2009-02-20 Previous Version: none Page Subjects (major changes since last revision) 8 4-10 to 14 Data Sheet Fixed typing error Refine existing frames, new frames for final page. Misc updates. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-02-20 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 01.1, 2009-02-20